List of semiconductor fabrication plants

This is a list of semiconductor fabrication plants: A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are made. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design only firms (fabless companies), or by Pure Play foundries, who manufacture designs from fabless companies but do not design their own ICs. Some Pure Play foundries like TSMC offer IC design services, and others like Samsung design and manufacture ICs for their customers, while designing, manufacturing and selling their own ICs.

This list is incomplete; you can help by expanding it.

Notes:

  • Plant location is where the plant is located,.
  • Started production is when the plant officially started volume (or mass) production.
  • Wafer size is the largest wafer size that the facility is capable of processing.
  • Process technology node is the size of the smallest features that the facility is capable of etching onto the wafers.
  • Wafer capacity per month is the plant's Nameplate capacity. It does not mean that the facility is working at that capacity. The number of wafers that a plant actually processes in relation to its nameplate capacity is referred to as the plant's utilization.
  • Technology/products are the products that the facility is capable of producing, as not all plants can produce all products on the market.

Open plants are listed below; plants that are closed are below this first table.

Open
Company Plant Name Plant Location Plant Cost (in US$ billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) Technology / Products
NHanced Semiconductors[1] MNC USA, NC, Morrisville 2001 100, 150, 200 >=500 1000 MEMS, Silicon Sensors, BEoL, 2.5/3D and advanced packaging
Epson[2] T wing Japan, Sakata 1997 200 150-350 25,000
Epson[2] S wing Japan, Sakata 1991 150 350-1200 20,000
Hanking Electronics Fab 1 China, Liaoning, Fushun 2018 200 10,000 MEMS Foundry, MEMS Design, MEMS Sensors (Inertial, Pressure, Ultrasound, Piezoelectric, LiDar, Bolometer )
Integral Belarus, Minsk 1963 100, 150, 200 2000, 1500, 350
Sensera uDev-1 USA, MA, Woburn 2014 150 700 1,000 MEMS, MicroDevice assembly
ISRO SCL India, Chandigarh 200 180 MEMS, CMOS, CCD, N.S.
Silterra Malaysia Fab1 Malaysia, Kedah, Kulim 1.6 2000 200 90-180 28,000–30,000 CMOS, HV, MEMS, RF, Logic, Analog, Mix Signal
Microchip Fab 2 USA, AZ, Tempe 1994 200
Microchip Fab 4 USA, OR, Gresham 2004 200
Microchip Fab 5 USA, CO, Colorado Springs 150
CanSemi[3] China, Guanzhou 4 300 180-130 Foundry[4]
Nanya Fab Taiwan, ? 199x 300 DRAM
Nanya Fab 2 Taiwan, Linkou 0.8 2000 200[5] 175 30,000 DRAM
Nanya Fab 3A[6] Taiwan, New Taipei City[7] 1.85[8] 2018 20 DRAM
Intel D1B USA, OR, Hillsboro 1996 300 10 / 14 / 22 Microprocessors[9]
Intel D1C[10][9] USA, OR, Hillsboro 2001 300 10 / 14 / 22 Microprocessors[9]
Intel D1D[10][9] USA, OR, Hillsboro 2003 300 7 / 10 / 14 Microprocessors[9]
Intel D1X[11][9] USA, OR, Hillsboro 2013 300 7 / 10 / 14 Microprocessors[9]
Intel Fab 12[10][9] USA, AZ, Chandler 1996 300 22 / 65 Microprocessors & chipsets[9]
Intel Fab 32[10][12] USA, AZ, Chandler 3 2007 300 45
Intel Fab 32[10][9] USA, AZ, Chandler 2007 300 22 / 32 Microprocessors[9]
Intel Fab 42[13][14][9] USA, AZ, Chandler 7[15] 2020 (planned)[16] 300 7 Microprocessors[9]
Intel Fab 11x[10][9] USA, NM, Rio Rancho 2002 300 32 / 45 Microprocessors[9]
Intel Fab 18[17] Israel, Kiryat Gat 1996 200 65 Microprocessors and chipsets[18]
Intel Fab 10[10] Ireland, Leixlip 1994 200
Intel Fab 14[10] Ireland, Leixlip 1998 200
Intel Fab 24[10][9] Ireland, Leixlip 2004 300 14 / 65 / 90[19] Microprocessors, Chipsets and Comms[9]
Intel Fab 28[10][9] Israel, Kiryat Gat 2008 300 22 / 45 Microprocessors[9]
Intel Fab 68[10][20] China, Dalian 2.5 2010 300 65[21] VNAND[9]
Intel Costa Rica, Heredia, Belén 1997 300 22
TowerJazz (formerly Maxim) San Antonio[22][23] USA, TX, San Antonio 2003 200 180 Al BEOL, Power, RF Analog
Apple (formerly Maxim, formerly Samsung) X3[24] USA, CA, San Jose ?, 1997, 2015[25]
Maxim MaxFabNorth[26] USA, OR, Beaverton
Mikron Russia, Zelenograd 65-180
VSP Mikron WaferFab[27] Russia, Voronezh 1959 100/150 900+ 6000 Analog, power
NXP Semiconductors (formerly Freescale Semiconductor) (formerly Motorola) MOTOFAB1[28] Mexico, Guadalajara 2002
Micron Fab 1 USA, VA, Manassas 1981 300 DRAM
Micron Fab 2 IMFT USA, UT, Lehi 300 25[29] 70,000 DRAM
Micron Micron Memory Taiwan[30] Taiwan, Taichung
Micron Taiwan, Taichung[31]
Micron Fab 6 USA, VA, Manassas 300 25[29] 70,000 DRAM, NAND FLASH, NOR
Micron Fab 4[32] USA, ID, Boise 300 RnD
Micron Fab 13[33] Singapore, Singapore 200 NOR
Micron Fab 10[34] Singapore, Singapore 300 100,000 NAND FLASH
Micron Fab 7 (formerly TECH Semiconductor, Singapore)[35] Singapore, Singapore 300 60,000 NAND FLASH
Micron Fab 15 (formerly Elpida Memory, Hiroshima)[32][30] Japan, Hiroshima 300 20 and under 100,000 DRAM
Micron Fab 16 (formerly Rexchip, Taichung)[32] Taiwan, Taichung 300 30 and under 80,000 DRAM
Micron Fab 11 (formerly Inotera)[36] Taiwan, Taoyuan 300 20 and under 80,000 DRAM
Micron UK, Scotland[30]
Micron Singapore[30] 200 NOR Flash
Micron Micron Semiconductor Asia Singapore[30]
Micron China, Xi'an[30]
GlobalFoundries Fab 9 USA, VT, Essex Junction 200 90–350 40,000
GlobalFoundries Fab 10 USA, NY, East Fishkill 2.5 2002 300 22–90 14,000
GlobalFoundries Fab 1 Module 1[37] Germany, Dresden 3.6[38] 2005 300 22–45 35,000[38] Foundry
GlobalFoundries Fab 1 Module 2 Germany, Dresden 4.9[38] 1999 300 22–45 25,000[38] Foundry
GlobalFoundries Fab 1 Module 3 Germany, Dresden 2.3[38] 2011[38] 300 22–45 6,000[38] Foundry
GlobalFoundries Fab 7[37] Singapore 4.6[38] 2005[38] 300 40, 90, 65, 130 50,000 Bulk CMOS, SoI
GlobalFoundries Fab 8[37] USA, NY, Malta 4.6, 2.1 2012, 2014[38] 300 14 / 22 / 28 60,000 High-K Metal Gate[39]
GlobalFoundries Technology Development Center[38] USA, NY, Malta 1.5[38] 2014[38]
GlobalFoundries Fab 2[40] Singapore 1.3[38] 1995[38] 200 350–600 56,000[38]
GlobalFoundries Fab 3/5[40] Singapore 0.915, 1.2[38] 1997, 1995[38] 200 180–350 54,000
Vanguard International Semiconductor Corporation Fab 3E[40] Singapore 1.3[38] 200 180 34,000
GlobalFoundries Fab 6[40] Singapore 1.4[38] 2000[38] 200 110–180 45,000
GlobalFoundries Abu Dhabi[38] UAE, Abu Dhabi[38] 6.8[38] 2016[38] 110–180 45,000 Foundry
GlobalFoundries China, Chengdu[41] 10 Planned
Kioxia Yokkaichi Operations[42][43] Japan, Yokkaichi 1992 173,334[44][45][46][47] Flash Memory
Kioxia/SanDisk Fab 5 Phase 1 (at Yokkaichi Operations) Japan, 800 Yamanoisshikicho, Yokkaichi, Mie[48] 2011 Flash
Kioxia/SanDisk Fab 5 Phase 2[48] (at Yokkaichi Operations) Japan, Mie 2011 300 15[49] Flash
Kioxia[50] Fab 3 (at Yokkaichi Operations) Japan, Yokkaichi NAND Memory
Kioxia[51] Fab 4 (at Yokkaichi Operations) Japan, Yokkaichi 2007 NAND Memory
Kioxia[52] Kaga Toshiba Japan, Ishikawa Power semiconductor devices
Kioxia[53] Oita Operations Japan, Kyushu
Kioxia[54][55] Fab 6 (phase 1) (at Yokkaichi Operations)[56] Japan, Yokkaichi 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[57][43] 2018 BiCS FLASH™
Kioxia[54][55] Fab 6 (phase 2) (at Yokkaichi Operations) Japan, Yokkaichi 1.6, 1.7, 1.8 (estimates) (combined costs of installation of equipment at Phase 1 and construction of Phase 2)[57][43] Planned BiCS FLASH™
Kioxia[54][55] Japan, Yokkaichi 4.6[58][59] Planned BiCS FLASH™
Kioxia[54] Fab 2 (at Yokkaichi Operations) Japan, Yokkaichi 1995 3D NAND
Kioxia[60][61] New Fab 2 (at Yokkaichi Operations) Japan, Yokkaichi 2016, July 15 3D NAND
Kioxia[62][63][64][65] Japan, Iwate Prefecture Under Construction 3D NAND
Hitachi[66] Rinkai Factory Japan, 5-2-2, Omikacho, Hitachi-shi, Ibaraki, 319-1221 MEMS Foundry
Hitachi[66] Haramachi Factory Japan, 20 Aza Oohara, Shimo-Ota, Haramachi-ku, Minamisouma-shi, Fukushima, 975-0041 Power semiconductors
Hitachi[66] Yamanashi Factory Japan, 545, Itchohata, Chuo-shi, Yamanashi, 409-3813 Power semiconductors
TSMC Fab 2[67] Taiwan, Hsinchu 0.735[38] 1990[38] 150 88,000[68][38] Foundry
TSMC Fab 3 Taiwan, Hsinchu 2[38] 1995[38] 200 100,000[38]
TSMC Fab 5 Taiwan, Hsinchu 1.4[38] 1997[38] 200 48,000[38]
TSMC Fab 6 Taiwan, Tainan 2.1[38] 2000, January; 2001[69] 200, 300 180-? 99,000[38] Foundry
TSMC Fab 7[70] Taiwan, Tainan 200
TSMC Fab 8 Taiwan, Hsinchu 1.6[38] 1998[38] 200 85,000[38]
TSMC Fab 10 China, Shanghai 1.3[38] 2004[38] 200 74,000
TSMC Fab 12 Taiwan, Hsinchu 5.2, 21.6 (total, all phases combined)[38] 2001[38] 300 150-28 77,500-123,800 (all phases combined)[38]
TSMC Fab 12A Taiwan, Hsinchu 300 25,000
TSMC Fab 12B Taiwan, Hsinchu 300 25,000
TSMC Fab 12 (P4) Taiwan, Hsinchu 6[38] 2009[38] 300 20 40,000[38]
TSMC Fab 12 (P5) Taiwan, Hsinchu 3.6[38] 2011[38] 300 20 6,800[38]
TSMC Fab 12 (P6) Taiwan, Hsinchu 4.2[38] 2013[38] 300 16 25,000
TSMC Fab 12 (P7) Taiwan, Hsinchu (future) 300 16
TSMC Fab 12 (P8)[38] Taiwan, Chunan[38] 5.1[38] 2017[38] 450[38]
TSMC Fab 14 Taiwan, Tainan 5.1[38] 2002,[69] 2004[38] 300 20 82,500[38]
TSMC Fab 14 (B) Taiwan, Tainan 300 16 50,000+[71]
TSMC Fab 14 (P3)[38] Taiwan, Tainan 3.1[38] 2008[38] 300 16 55,000[38]
TSMC Fab 14 (P4)[38] Taiwan, Tainan 3.750[38] 2011[38] 300 16 45,500[38]
TSMC Fab 14 (P5)[38] Taiwan, Tainan 3.650[38] 2013[38] 300 16
TSMC Fab 14 (P7)[38] Taiwan, Tainan 4.850[38] 2015[38] 300 16
TSMC Fab 14 (P6)[38] Taiwan, Tainan 4.2[38] 2014[38] 300 16
TSMC WaferTech Fab 11 USA, WA, Camas 200
TSMC Fab 15[72] Taiwan, Taichung 9.3 2011 300 20 100,000+(166,000 estimate)[73][71][74]
TSMC Fab 15 (B) Taiwan, Taichung 300
TSMC Fab 15 (P1)[38] Taiwan, Taichung 3.125[38] 2011 300 4,000[38]
TSMC Fab 15 (P2)[38] Taiwan, Taichung 3.150[38] 2012[38] 300
TSMC Fab 15 (P3)[38] Taiwan, Taichung 3.750[38] 2013[38] 300
TSMC Fab 15 (P4)[38] Taiwan, Taichung 3.800[38] 2014[38] 300
TSMC Fab 15 (P5)[38] Taiwan, Taichung 9.020[38] 2016[38] 300
TSMC Fab 18 Taiwan, Southern Taiwan Science Park[75][76] 17.08 2020 (planned), under construction 300 5[77] 120,000
TSMC[78] NJ Fab 16 China, Nanjing 2018 300 20,000
TSMC[78][79][80] Taiwan, Tainan Science Park[81] 20 (expected)[82] Future 3[83][84]
TSMC (formerly WSMC)[85] 200
TSMC (formerly Acer Semiconductor Manufacturing Inc.) (formerly Texas Instruments)[86][87][88] 200 Foundry (current)

DRAM (former), Logic (former)

TSMC 20[89] 2022 (planned)[90] 3 Foundry
Epistar (formerly TSMC)[91][92][93] Taiwan, Hsin-Chu Science Park 0.080 2011, second half LEDs
UMC Fab 6A Taiwan, Hsinchu 0.35[38] 1989[38] 150 450 50,000
UMC Fab 8AB Taiwan, Hsinchu 1[38] 1995[38] 200 250 70,000[94]
UMC Fab 8C Taiwan, Hsinchu 1[38] 1998[38] 200 350-110 29,000
UMC Fab 8D Taiwan, Hsinchu 1.5[38] 2000[38] 200 90 32,000
UMC Fab 8E Taiwan, Hsinchu 0.96[38] 1998[38] 200 180 35,000
UMC Fab 8F Taiwan, Hsinchu 1.5[38] 2000[38] 200 150 32,000
UMC Fab 8S Taiwan, Hsinchu 0.8[38] 2004[38] 200 350-250 25,000
UMC Fab 8N Taiwan, Hsinchu 0.750[38] 2003[38] 200 350-110 50,000
UMC Fab 12A Taiwan, Tainan 4.65, 4.1, 6.6, 7.3[38] 2001, 2010, 2014, 2017[38] 300 14 82,000[94]
UMC Fab 12i Singapore 3.7[38] 2004[38] 300 130-40 50,000
UMC Fab 12X China, Xiamen 300 55-28 50,000
UMC Fab 1 Japan, Tateyama 0.543[38] 1997[38]
UMC Japan[69][85] 300 180-?
Vanguard International Semiconductor Fab 1 Taiwan, Hsinchu 0.997[38] 1994[38] 200 55,000
Vanguard International Semiconductor (formerly Winbond) Fab 2 (formerly Fab 4&5)[95] Taiwan, Hsinchu 0.965[38] 1998[38] 200 55,000
IM Flash IM Flash[96] Singapore 2011 300 25
IM Flash IM Flash USA, UT, Lehi 300 20 3D XPoint
IM Flash IM Flash USA, VA, Manassas
NXP Semiconductors ATMC[97] USA, TX, Austin 1995 200 90
NXP Semiconductors Chandler Fab[98] USA, AZ, Chandler 1.1[99] 1993 200 180
NXP Semiconductors Oak Hill Fab[100] USA, TX, Austin .8[101] 1991 200 250
Nexperia Hamburg site[102] Germany, Hamburg 1953 200 35,000 Small-signal and bipolar discrete devices
Nexperia Manchester[102] UK, Bramhall Moor Lane, Pepper Rd, Hazel Grove, Stockport SK7 5BJ 1987? 150 24,000 TrenchMOS MOSFETs
NXP Semiconductors China, Jilin
NXP Semiconductors UK, Manchester
NXP Semiconductors ICN8 Netherlands, Nijmegen 200 40,000+[103]
NXP Semiconductors (formerly Freescale Semiconductor) CHD-FAB USA, AZ, Chandler[104]
NXP Semiconductors (formerly Freescale Semiconductor) ATMC USA, AZ, Chandler[104]
NXP Semiconductors (formerly Mullard) Stockport UK, Hazel Grove, Stockport
NXP Semiconductors SSMC Singapore 1.7[38] 2001[38]
NXP Semiconductors Japan[105] Bipolar, Mos, Analog, Digital, Transistors, Diodes
X-Fab France SAS (formerly Altis Semiconductor) (formerly IBM)[106] ACL-AMF France, Corbeil-Essonnes 1991, 1964[38] 200 130–350 CMOS
X-Fab (formerly 1st Silicon)[107][108] Malaysia 2000 200 130–350 30,000
LFoundry (formerly Micron)[109] Italy, Avezzano 1995 200 90–150 40,000
Raytheon Systems Ltd UK, Glenrothes, Scotland 1960 100 CMOS on SiC
STMicroelectronics AMK8 (second, newer fab) Singapore, Ang Mo Kio 1995 200
STMicroelectronics AMJ9 (first fab, initially owned by SGS Microelettronica) Singapore, Ang Mo Kio 1984[110] 150, 200 6” 14 kpcs/day, 8” 1.4 kpcs/day Power-MOS/ IGBT/ bipolar/ CMOS
STMicroelectronics Crolles 1 / Crolles 200 France, Crolles 1993 200
STMicroelectronics Crolles2 / Crolles 300 France, Crolles 2003 300 90, 65, 45, 32
STMicroelectronics Tours France, Tours 200 500 8": 9kpcs/W; 12" 400-1000/W ASIC
STMicroelectronics (formerly SGS-ATES) R2 (upgraded in 2001 from R1) Italy, Agrate Brianza 1963 200
STMicroelectronics (formerly SGS-ATES) AG8/AGM Italy, Agrate Brianza 1963 200
STMicroelectronics Catania Italy, Catania 1997 200
STMicroelectronics Rousset France, Rousset 2000 200
SUNY Poly CNSE NanoFab 300 North[111] USA, NY, Albany .175, .050 2004, 2005 300 65, 45, 32, 22
SUNY Poly CNSE NanoFab 200[112] USA, NY, Albany .016 1997 200
SUNY Poly CNSE NanoFab Central[111] USA, NY, Albany .150 2009 300 22
Powerchip Semiconductor Memory Foundry, Fab P1[113][114] Taiwan, Hsinchu 2.24[38] 2002[38] 300 90, 70, 22[115] 80,000 Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P2[114] Taiwan, Hsinchu, Hsinchu Science Park 1.86[38] 2005[38] 300 90, 70, 22[115] 80,000 Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
Powerchip Semiconductor Fab P3[114] Taiwan, Hsinchu, Hsinchu Science Park 300 90, 70, 22[115] 20,000 Memory IC, LCD drive IC, Integrated Memory Chips, CMOS Image Sensors, and Power Management IC
ON Semiconductor (formerly Fairchild Semiconductor) USA, PA, Mountain Top 1960/1997 200 350
ON Semiconductor (formerly Fairchild Semiconductor) USA, ME, South Portland 1960/1997 200 350
SMIC S1 Mega Fab (S1A/S1B/S1C)[116] China, Shanghai 200 350-90 114,000[117]
SMIC S2 (Fab 8)[116] China, Shanghai 300 45/40-32/28 20,000[117]
SMIC SN1[116] China, Shanghai (planned) 300 70,000[78]
SMIC B1 Mega Fab (Fab 4, Fab 6)[116] China, Beijing 2004 300 180-90/55 50,000[117]
SMIC B2A[116] China, Beijing 3.59[118] 2014 300 45/40-32/28 35,000[117]
SMIC Fab 7[116] China, Tianjin 2004 200 350-90 50,000[117]
SMIC Fab 15[116] China, Shenzhen 2014 200 350-90 50,000[117]
SMIC SZ (Fab 16A/B)[116] China, Shenzhen 2019 300 14 40,000[78]
SMIC[78] B3 China, Beijing Under construction 300 35,000
SMIC LF Italy, Avezzano 180-90 50,000
Winbond Memory Product Foundry[119] Taiwan, Taichung 300 46
Winbond CTSP Site[120][121] Taiwan, No. 8, Keya 1st Rd.,Daya Dist.,Central Taiwan Science Park, Taichung City 42881 300
Winbond[122] Planned 300
MagnaChip F-5[123] 2005 200 130
ProMOS Fab 4[124][125] Taiwan, Taichung 1.6 300 70
TSI Semiconductors Heilbronn, HNO-Line Germany, Heilbronn 0.125[38] 1993[38] 150 10,000
TSI Semiconductors[126] Roseville fab, M-Line, TD-Line, K-Line[127][38] USA, CA, Roseville 1992, 1985[38] 200
SK Hynix[128] China, Chongqing
SK Hynix[128] China, Chongqing
SK Hynix[129][130] South Korea, Cheongju, Chungcheongbuk-do Under construction[131] NAND Flash
SK Hynix[130] South Korea, Cheongju Under construction NAND Flash
SK Hynix[130] South Korea, Incheon Planned NAND Flash
SK Hynix M8 South Korea, Cheongju 200 Foundry
SK Hynix M10 South Korea, Icheon 300 DRAM
SK Hynix M11 South Korea, Cheongju 300 NAND Flash
SK Hynix M12 South Korea, Cheongju 300 NAND Flash
SK Hynix HC1 China, Wuxi 300 100,000[78] DRAM
SK Hynix HC2 China, Wuxi 300 70,000[78] DRAM
SK Hynix M14 South Korea, Icheon 300 DRAM, NAND Flash
CSMC[132] China, Wuxi 200-300 130-above
UMC(formerly Fujitsu) Kawasaki Japan, Kawasaki 1966[133]
UMC (formerly Fujitsu) Mie (original installations)[134] Japan, Mie 1974 150, 200, 300[135]
UMC(formerly Fujitsu)[136][137] Fab B1 (at Mie)[138] Japan, 1500 Tadocho Mizono, Kuwana, Mie[139] 2005 300 65, 90 15,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs
UMC(formerly Fujitsu)[136][137] Fab B2 (at Mie)[138] Japan, 1500 Tadocho Mizono, Kuwana, Mie[139] 1 (total)[140] 2007, July 300 65, 90 25,000 Foundry, Ultra-low Power ICs, Embedded Memory, RF ICs[141]
UMC(formerly Fujitsu)[136][137] Japan, 1500 Tadocho Mizono, Kuwana, Mie[139] 2015 300 40[142] 5,000 Foundry
UMC(formerly Fujitsu) Kumagaya Plant[138] Japan, Saitama, 1224 Oaza-Nakanara, Kumagaya-shi, 360-0801 1974
UMC(formerly Fujitsu)[143] Suzaka Plant Japan, Nagano, 460 Oaza-Koyama, Suzaka-shi, 382-8501
UMC(formerly Fujitsu) Iwate Plant[144][135] Japan, Iwate, 4-2 Nishinemoriyama, Kanegasaki-cho, Isawa-gun, 029-4593
UMC(formerly Fujitsu)[145][146] Aizu Wakamatsu Plant[147] Japan, Fukushima, 3 Kogyo Danchi, Monden-machi, Aizuwakamatsu-shi, 965-8502 1970[133] 150, 200[148][149][150][151] Memory, Logic
Micronas FREIBURG[152][153] Germany, Freiburg, 19 D-79108, Hans-Bunte-Strasse
SkyWater Technology (formerly Cypress Semiconductor fab) Minnesota fab USA, MN, Bloomington 1991 65, 90, 130, 180, 250, 350
Cypress Semiconductor Fab25 USA, TX, Austin 1994 200 Flash / Logic
ON Semiconductor Gresham[154] USA, OR, Gresham 200 110
ON Semiconductor (formerly AMI Semiconductor) Pocatello[155] USA, ID, Pocatello 200 350
ON Semiconductor Oudenaarde Belgium, Oudenaarde 150 350 4,000
ON Semiconductor ISMF Malaysia, Seremban 150 350 80,000 Discrete
ON Semiconductor (formerly Sanyo)[156][157] Niigata Japan, Niigata 150 350
ON Semiconductor Roznov Czech Republic, Roznov 150 5000
ON Semiconductor USA, RI, Cranston
Texas Instruments (formerly National Semiconductor) South Portland[158] USA, ME, South Portland .932 1997 350, 250, 180
Samsung V1-Line[159] South Korea, Hwaseong 6 2020, February 20 300 7 Microprocessors, Foundry
Samsung S3-Line[160] South Korea, Hwaseong 10.2, 16.2 (planned)[161][162] 300 10 200,000 DRAM, VNAND, Foundry
Samsung S2-Line[163] USA, TX, Austin 16[164][165] 2011 300 65-11 92,000 Microprocessors, Foundry
Samsung S1-Line[166] South Korea, Giheung 33 (total) 2005 (second phase), 1983 (first phase)[167][168] 300 65-7 62,000 Microprocessors, S.LSI, LEDs, Foundry[169]
Samsung Pyeongtaek[170][171][161] South Korea, Pyeongtaek 14.7, 27 (total)[172][165][173][174][175][176][177][131] 2017, July 6 300 14 450,000[178] V-NAND, DRAM, Foundry
Samsung 6 Line[179] South Korea, Giheung 200 180-65 Foundry
Samsung Samsung China Semiconductor[180] China, Shaanxi Province DDR Memory
Samsung Samsung Suzhou Research Center (SSCR)[166] China, Suzhou, Suzhou Industrial Park DDR Memory
Samsung Onyang Complex[180] South Korea, Chungcheongnam-do DDR Memory, System Logic
Samsung F1x1[181][161] China, Xian 2.3[182] 2014 (first phase, second phase is under review)[161] 300 20 100,000 VNAND
Samsung Giheung Campus[183] South Korea, Gyeonggi-do, Yongin LEDs
Samsung Hwasung Campus[183] South Korea, Gyeonggi-do, Hwaseong LEDs
Samsung Tianjin Samsung LED Co., Ltd.[183] China, Tianjin, Xiqing, Micro-Electronic Industrial Park, Weisi Road LEDs
TowerJazz Fab 1[184] Israel, Migdal Haemek 0.235[38] 1989, 1986[38] 150 1000-350 14,000 Planarized BEOL, W and Oxide CMP, CMOS, CIS, Power, Power Discrete
TowerJazz Fab 2[184] Israel, Migdal Haemek 1.226[38] 2003 200 180-130 51,000[38] Cu and Al BEOL, EPI, 193 nm Scanner, CMOS, CIS, Power, Power Discrete, MEMS, RFCMOS
TowerJazz Fab 3,[184] Newport Beach[38] USA, CA, Newport Beach 0.165[38] 1967, 1995[38] 200 130–500 25,000[38] Al BEOL, SiGe, EPI
TowerJazz – TPSCo Fab 5,[184] Tonami[185] Japan, Tonami 1994 200 500-130 Analog/Mixed-Signal,Power,Discrete,NVM,CCD
TowerJazz – TPSCo Fab 7,[184] Uozu[185] Japan, Uozu 1984 300 65. 45 CMOS,CIS,RF,SOI, Analog/Mixed-Signal
TowerJazz – TPSCo Fab 6,[184] Arai[185] Japan, Arai 1976 200 130-110 Analog/Mixed-Signal,CIS,NVM,Thick Cu RDL
TowerJazz China, Nanjing[186][187] 200, 300 (planned)
Texas Instruments FFAB Germany, Freising 200
Texas Instruments MFAB USA, ME, ? 200
Texas Instruments RFAB USA, TX, Richardson 2009 300
Texas Instruments DMOS6 USA, TX, Dallas 300
Texas Instruments DMOS5 USA, TX, Dallas 200
Texas Instruments DFAB USA, TX, Dallas 1964 150/200
Texas Instruments SFAB USA, TX, Sherman 150
Texas Instruments GFAB UK, Scotland, Greenock 150/200 40,000
Texas Instruments MIHO8 Japan, Miho 200
Texas Instruments Aizu Japan, Aizu 200
Texas Instruments Chengdu (CFAB) China, Chengdu 200
General Motors Components Holdings Fab III USA, IN, Kokomo 125/200 500+
Infineon Technologies Villach Austria, Villach 1970[188] 100/150/200/300 MEMS, SiC, GaN
Infineon Technologies Dresden Germany, Dresden 3[189] 1994/2011[190] 200/300 90
Infineon Technologies Kulim[191] Malaysia, Kulim 2006[192] 200/300 50,000
Infineon Technologies Kulim 2 Malaysia, Kulim 2015 200/300 50,000
Infineon Technologies Regensburg[193] Germany, Regensburg 1959
Infineon Technologies Cegled[194] Hungary, Cegled
Infineon Technologies Cheonan South Korea, Cheonan-si
Infineon Technologies El Segundo USA, CA, El Segundo[195]
Infineon Technologies Batam Indonesia, Batam
Infineon Technologies Leominster USA
Infineon Technologies Malacca Malaysia
Infineon Technologies Mesa USA
Infineon Technologies Morgan Hill USA
Infineon Technologies Morrisville USA
Infineon Technologies Neubiberg Germany
Infineon Technologies Newport UK
Infineon Technologies San Jose USA
Infineon Technologies Singapore Singapore
Infineon Technologies Temecula USA
Infineon Technologies Tijuana Mexico
Infineon Technologies Warstein Germany
Infineon Technologies Wuxi China
Bosch Germany, Reutlingen 1995[196] 150 ASIC, analog, power
Bosch Germany, Dresden 1.0[197] under construction 300
Bosch WaferFab Germany, Reutlingen 0.708[198] 2010[196] 200 30,000 ASIC, analog, power, MEMS
Analog Devices Limerick Ireland, Limerick 200
Analog Devices Wilmington USA, MA, Wilmington 200/150
Analog Devices (formerly Linear Technology) Hillview USA, CA, Milipitas 150
Analog Devices (formerly Linear Technology) Camas USA, WA, Camas 150
X-Fab Erfurt Germany, Erfurt 1985[38] 200[199] 600–1000[199] 11200–[199]
X-Fab Dresden Germany, Dresden 0.095[38] 1985[38] 200[200] 350–1000[200] 6000–[200]
X-Fab Itzehoe Germany, Itzehoe 200[201] 13000–[201] MEMS
X-Fab Kuching Malaysia, Kuching 1.89[38] 2001[38] 200[202] 130–350[202] 27000–[202]
X-Fab Lubbock USA, TX, Lubbock 0.197[38] 1977[38] 200[203] 600–1000[203] 15000–[203]
Teledyne DALSA Teledyne DALSA Semiconductor Canada, Bromont, QC 1980 150/200 HV ASICs, HV CMOS, MEMS, CCD
CEITEC Brazil, Porto Alegre 200 600–1000 RFID
Unitec Blue[204] Argentina, Chascomús 1.2[205]
ams[206] FAB B Austria, Unterpremstaetten 200 350
HuahongGrace[207] FAB China, Shanghai 300 90
ASMC[208] FAB 1/2 China, Shanghai 1992, 1997[38] 200 600 78,000[38] BCD, HV
ASMC[208] FAB 3 China, Shanghai 2004[38] 200 250 12,000[38]
Beilling[209] China, Shanghai 150 1200 BiCMOS, CMOS
Diodes Incorporated[210] OFAB UK, Oldham 150
Polar Semiconductor[211] FAB1 USA, MN, Bloomington 150 BCD, HV
Polar Semiconductor[211] FAB2 USA, MN, Bloomington 200 BCD, HV, GMR
Sony[212] Kagoshima Technology Center Japan, Kagoshima 1973 Bipolar CCD, MOS, MMIC, SXRD
Sony[212] Oita Technology Center Japan, Oita 2016 CMOS Image Sensor
Sony[212] Nagasaki Technology Center Japan, Nagasaki 1987 MOS LSI, CMOS Image Sensors, SXRD
Sony[212] Kumamoto Technology Center Japan, Kumamoto 2001 CCD Imgage Sensors, H-LCD, SXRD
Sony[212] Shiroishi Zao Technology Center Japan, Shiroishi 1969 Semiconductor Lasers
Sony (formerly Renesas) (formerly NEC Electronics) (formerly NEC)[212][213][214] Yamagata Technology Center Japan, Yamagata 2014 CMOS Image Sensor, eDRAM (formerly)
Sony Sony Shiroishi Semiconductor Inc. Japan, Miyagi Semiconductor Lasers[215]
Renesas[216] Renesas Semiconductor (Beijing) Co., Ltd. China, Haidian District, Beijing 100085
Renesas[216] Renesas Semiconductor (Suzhou) Co., Ltd. China, No.176, Zhongxin Avenue West, Suzhou Industrial Park, Suzhou 215021
Renesas[216] Renesas Semiconductor (Malaysia) Sdn. Bhd. Malaysia, Bayan Lepas Free Industrial Zone, 11900 Penang
Renesas[216] Renesas Semiconductor (Kedah) Sdn. Bhd. Malaysia, Kulim Industrial Estate, 09000 Kulim, Kedah
Renesas[216] Renesas Semiconductor KL Sdn. Bhd. Malaysia, KM 15, Jalan Banting, 42500 Telok Panglima Garang, Selangor Darul Ehsan
Renesas[216] Renesas Semiconductor Manufacturing Co., Ltd. Japan, 751, Horiguchi, Hitachinaka-shi, Ibaraki, 312-8504
Renesas-Intersil[216] 1 Murphy Ranch Rd USA, CA, Milpitas
LG Innotek[217] Paju South Korea, 570, Hyuam-ro, Munsan-eup, Paju-si, Gyeonggi-do, 10842 LED Epi-wafer, Chip, Package
Macronix[218] Fab 5 300 50,000
Macronix[218] Fab 2 200 48,000
Macronix[218] Fab 1 150 40,000
Nuvoton[219] Fab2 Taiwan 150 350-1000 nm 45,000[219] Generic Logic, Mixed Signal (Mixed Mode), High Voltage, Ultra High Voltage, Power Management, Mask ROM (Flat Cell), Embedded Logic, Non-Volatile Memory, IGBT, MOSFET, Biochip, TVS, Sensor
Nuvoton Nuvoton Technology Corporation Taiwan, No. 4, Creation Rd. III, Hsinchu Science Park
Mitsumi Electric[220] Semiconductor Works #3 Japan, Atsugi Operation Base 2000
Mitsumi Electric[220] Japan, Atsugi Operation Base 1979
Rohm[221] Shiga Factory Japan 200 150 IGBT, MOSFET, MEMS
Rohm (Lapis Semiconductor)(formerly Oki Semiconductor)(Oki Electric Industry)[221][222] Miyasaki Japan 150 MEMS
Rohm (Lapis Semiconductor)[221] Building No.1 Japan 1961[223] Transistors
Rohm (Lapis Semiconductor)[221] Building No.2 Japan 1962[223] Transistors
Rohm (Lapis Semiconductor)[221] Building No.3 Japan 1962[223] Transistors
Rohm (Lapis Semiconductor)[221] Building No.4 Japan 1969[223] Transistors
Rohm (Lapis Semiconductor)[221] Chichibu Plant Japan 1975[223] DRAM
Rohm (Lapis Semiconductor)[221] VLSI Laboratory No. 1 Japan 1977[223] VLSI
Rohm (Lapis Semiconductor)[221] VLSI Laboratory No. 2 Japan 1983[223]
Rohm (Lapis Semiconductor)[221] VLSI Laboratory No. 3 Japan 1983[223] DRAM
Rohm (Lapis Semiconductor)[221] Oregon Plant USA, OR 1990[223]
Rohm (Lapis Semiconductor)[221] Thailand Thailand 1992[223]
Rohm (Lapis Semiconductor)[221] ULSI Laboratory No. 1 Japan 1992[223] 500 DRAM
Rohm (Kionix)[224] Ithaca USA, NY, Ithaca 150 MEMS
Rohm (Kionix)[224] Kyoto Japan, Kyoto 200 MEMS
Fuji Electric[225] Omachi Japan, Nagano Prefecture
Fuji Electric[226] Iyama Japan, Nagano Prefecture
Fuji Electric[227] Hokuriku Japan, Toyama prefecture
Fuji Electric[228] Matsumoto Japan, Nagano prefecture
Murata Manufacturing[229] Nagano[230] Japan 0.100 SAW filters[230]
Murata Manufacturing[229] Otsuki[230] Japan
Murata Manufacturing[229] Kanazawa Japan 0.111 SAW filters[230]
Murata Manufacturing (formerly Fujifilm)[231][232] Sendai Japan, Miyagi Prefecture 0.092[230] MEMS[233]
Murata Manufacturing[231] Yamanashi Japan, Yamanashi Prefecture
Murata Manufacturing[234] Yasu Japan, Yasu, Shiga Prefecture
Olympus Corporation[235] Nagano Japan, Nagano Prefecture MEMS[236]
Micron Semiconductor Ltd.[237] Lancing UK, West Sussex, Lancing Detectors
D-Wave Systems[238] Superconducting Foundry[239] Quantum Processing Units (QPUs)[239]
Mitsubishi Electric[240] Power Device Works, Kunamoto Site Japan Power semiconductors
Mitsubishi Electric[240] Power Device Works, Fukuoka Site Japan, Kunamoto Prefecture, Fukuoka City[241] Power semiconductors and sensors[241]
Mitsubishi Electric[242] High frequency optical device manufacturing plant Japan, Hyogo Prefecture[242] High frequency semiconductor devices (GaAsFET, GaN, MMIC)[242]
SiSemi[243] China, Shenzhen, Longgang High-tech Industrial Park[244] 130 Power semiconductors, LED drivers, bipolar power transistors, power MOSFETs
SiSemi[244] 100 Transistors
Xinxin (XMC)[78] F1 China, Wuhan 300 20,000
Huali[78][245] F1 China, Shanghai 300 193, 55, 40, 28[246] 35,000 Foundry
Huali[78] F2 China, Shanghai Under construction 300 40,000
Nexchip[78] N1[247] China, Hefei Q4 2017 300 40,000 Display Drivers IC[248]
Nexchip[78] N2[247] China, Hefei Under construction 300 40,000
Nexchip[78] N3[247] China, Hefei Under construction 300 40,000
Nexchip[78] N4[247] China, Hefei Under construction 300 40,000
Wuhan Hongxin Semiconductor Manufacturing (HSMC)[249] China, Wuhan 2019 300 14, 7 Foundry
Jinhua(Fujian Jinhua Integrated Circuit Co., Ltd.)(JHICC)[250] China, Jinjiang 5.65[251] 2018 300 DRAM[252]
Jinhua[78][253] F2 China, Quanzhou Under construction 300 60,000
United Chip[78] Fab 12x China, Xiamen Under construction 300 50,000
Uni Group[78] SZ China, Shenzhen Under construction 300 50,000
Xinxin (XMC)[78] F2 China, Wuhan Under construction 300 200,000
Decoma[78] F2 China, Huaian Under construction 300 20,000
Wandai[78] CQ China, Chongqing Under construction 300 20,000
Cree Inc.[254] Durham USA, NC, Durham Compound Semiconductors, LEDs
Cree Inc.[255] Research Triangle Park USA, NC GaN HEMT RF ICs
Renesas (formerly NEC Electronics) (formerly NEC) Roseville[256][257] USA, CA, Roseville 1.2[258] 2002, April 200 RAM, SoCs, Multimedia Chips
Denso (formerly Fujitsu)[259] Denso Iwate[260][261][262] Japan, Iwate Prefecture, Kanegasaki-cho 0.088 Under construction, 2019, May (planned) Semiconductor wafers and sensors (since June 2017)
Rigetti Computing Fab-1[263][264][265] USA, CA, Fremont 130 Quantum Processors
Flir Systems USA, CA, Santa Barbara[266] 150 IR Detectors, Thermal Imaging Sensors
Rogue Valley Microdevices USA, OR, Medford 2003 150 MEMS foundry
New Japan Radio Kawagoe Works Japan, Saitama Prefecture, Fujimino City[267][268] 1959[105] 100, 150 4000, 400, 350 Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[269]

New Japan Radio Saga Electronics[270] Japan, Saga Prefecture 100, 150 4000, 400, 350[271] Foundry, Bipolar, Mixed Signal, Analog, Hi Speed BiCMOS, BCD, 40V Hi Speed Complementary Bipolar, Analog CMOS+HV,

SAW Filters[269]

New Japan Radio NJR FUKUOKA Japan, Fukuoka Prefecture, Fukuoka City[270] 2003[272] 100, 150 Bipolar, Analog ICs, MOSFETs LSI, BiCMOS ICs
New Japan Radio Japan, Nagano, Nagano City[273]
New Japan Radio Japan, Nagano, Ueda City[273]
ABB[274] Lenzburg Switzerland, Lenzburg 0.140 2010 (second phase) 18,750 (225,000 per year) High power semiconductors
Noel Technologies[275] 450-51[276][275] 500-250[277]
Skyworks Solutions[278] USA, CA Compound Semiconductors
Skyworks Solutions[278] Japan, Osaka SAW, TC-SAW Filters
Skyworks Solutions[278] USA, MA, Woburn RF/cellular components (SiGe)
Skyworks Solutions[278] Japan, Kadoma SAW, TC-SAW Filters
Skyworks Solutions[278] Singapore, Bedok South Road SAW, TC-SAW Filters
Seiko Instruments[279] China, Shanghai
Seiko Instruments[279] Japan, Akita
Seiko Instruments[279] Japan, Takatsuka
Lite-On Optoelectronics[280] China, Tianjin
Lite-On Optoelectronics[280] Thailand, Bangkok
Lite-On Optoelectronics[280] China, Jiangsu
Lite-On Semiconductor[281] Keelung Plant Taiwan, Keelung 1990 100 Thystors, DIscrete
Lite-On Semiconductor[281] Hsinchu Plant Taiwan, Hsinchu 2005 Bipolar BCD, CMOS
Lite-On Semiconductor[281] Lite-On Semi (Wuxi) China, Jiangsu 2004 100 Discrete
Lite-On Semiconductor[281] Wuxi WMEC Plant China, Jiangsu 2005 Discrete, Power, Optical ICs
Lite-On Semiconductor[281] Shanghai (SSEC) Plant China, Shanghai 1993 76 Fab, Assembly
Creative Sensor Inc.[282][283] NanChang Creative Sensor China, Jiangxi 2007 Image Sensors
Creative Sensor Inc.[282] Wuxi Creative Sensor China, JiangSu 2002
Creative Sensor Inc.[282] Wuxi Creative Sensor Taiwan, Taipei City 1998
Visera Technologies[284] Headquarters Phase I Taiwan, Hsinchu Science-based Industrial Park 2007, September CMOS Image Sensors
Kodenshi AUK Group[285] Silicon FAB Line
Kodenshi AUK Group[285] Compound FAB Line
Shindengen Electric Manufacturing[286] Philippines, Laguna
Shindengen Electric Manufacturing[286] Thailand, Lumphun
ABB[274] Czech Republic
Philips[287] Netherlands, Eindhoven 200,150 30,000 R&D, MEMS
Trumpf[288] Germany, Ulm VCSEL
nanoPHAB Netherlands, Eindhoven 50-100 10-50 2-10 MEMS
Epistar Fab F1[289] Taiwan, Longtan Science Park LEDs
Epistar Fab A1[289] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N2[289] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N8[289] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N1[289] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N3[289] Taiwan, Hsinchu Science Park LEDs
Epistar Fab N6[289] Taiwan, Chunan Science Park LEDs
Epistar Fab N9[289] Taiwan, Chunan Science Park LEDs
Epistar Fab H1[289] Taiwan, Central Taiwan Science Park LEDs
Epistar Fab S1[289] Taiwan, Tainan Science Park LEDs
Epistar Fab S3[289] Taiwan, Tainan Science Park LEDs
Nichia YOKOHAMA TECHNOLOGY CENTER[290] Japan, KANAGAWA LEDs
Nichia SUWA TECHNOLOGY CENTER[290] Japan, NAGANO LEDs
San'an Optoelectronics Tianjin San’an Optoelectronics Co., Ltd. China, Tianjin LEDs
San'an Optoelectronics Xiamen San’an Optoelectronics Technology Co., Ltd. China LEDs
San'an Optoelectronics Xiamen San’an Integrated Circuit China ICs
San'an Optoelectronics Xiamen San’an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Fujian Jing’an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Wuhu Anrui Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Anrui San'an Optoelectronics Co., Ltd. China LEDs
San'an Optoelectronics Anrui San'an Technology Co., Ltd. China LEDs
San'an Optoelectronics Luminus Summary USA LEDs
Lextar T01 Taiwan, Hsinchu Science Park LEDs
Everlight Yuan-Li Plant Taiwan, Miao-Li LEDs
Everlight Pan-Yu Plant China LEDs
Everlight Tu-Cheng Plant Taiwan, Taipei Country LEDs
Osram (Osram Opto Semiconductors) Malaysia, Kulim, Kulim Hi-Tech Park 0.350, 1.18[291] 2017, 2020 (second phase, planned)[292][293] 150 LEDs
Osram (Osram Opto Semiconductors) Malaysia, Penang[294][295] 2009 100 LEDs
Osram (Osram Opto Semiconductors) Germany, Regensburg[296] 2003, 2005 (second phase)[297] LEDs
HHGrace China, Zhangjiang 200 1000-90 53,000 eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HHGrace China, Jinqiao 200 1000-90 53,000 eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
HHGrace China, Shanghai 200 1000-90 53,000 eNVM, RF, Mixed Signal, Logic, Power Management, Power Discrete
CRMicro (formerly CSMC) Fab 1 1998[38] 150[298] 60,000[38] HV Analog, MEMS, Power, Analog, Foundry
CRMicro (formerly CSMC) Fab 2 2008[38] 200[298] 130 30,000[38] HV Analog, Foundry
CRMicro (formerly CSMC) Fab 3 1995[38] 200[298] 130 20,000[38]
CRMicro (formerly CSMC) Fab 5 2005[38] 30,000[38]
Diodes Incorporated (formerly BCD Semi)[299] China 150 4000-1000
HeJian China 1.2 2003, May 200 4000-1000 60,000 Foundry
AKM Semiconductor, Inc. FAB1 Japan, Nobeoka Sensors
AKM Semiconductor, Inc. FAB2 Japan, Nobeoka
AKM Semiconductor, Inc. FAB3 Japan, Fuji Sensors
AKM Semiconductor, Inc. FAB FP Japan, Hyuga
AKM Semiconductor, Inc. FAB5 Japan, Ishinomaki LSI
Broadcom Limited USA, CO, Fort Collins[300]
Pyongyang Semiconductor Factory 111 Factory North Korea, Pyongyang 1980s 3000[301]
Kim Il-sung Fab[301] Il-sung North Korea, Pyongyang 1965s 76 14/22[301] 25000-55000 OLEDs, Sensors, DRAM, SRAM, CMOS, Photodiodes, IGBT, MOSFET, MEMS
NEC[105] 100, 130, 150 SRAM, DRAM
NEC[302] Japan DRAM
NEWPORT WAFER FAB [303] FAB11 Newport, Wales, UK 200 [304] 180-700 [304] 32,000 [304] Compound Semiconductors, IC, MOSFET, IGBT [305]
NIPPON PRECISION CIRCUITS[105] Digital
NKK JFE Holdings[105] 200 6000 ,
NMB SEMICONDUCTOR[105] DRAM
NORTHERN TELECOM SEMICONDUCTOR

HERN TELECOM EUROPE[105]

 Semiconductor Lasers, Photodiodes
NORTHERN TELECOM SEMICONDUCTOR[105] 100, 150 NMOS, CMOS
Oki Electric Industry[105] Japan, Tokyo, Minato-ku 1961 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[105] Miyazaki Oki Electric Co 1981 100, 150, 130, 76 3000 7,200 Bipolar, Mask ROM, DRAM[223]
Oki Electric Industry[105] Miyagi Facility 1988[223] 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[105] Hachioji Facility 100, 150, 130, 76 7,200 Bipolar, Mask ROM
Oki Electric Industry[306] 150 180-150 SOCs, LSI, Logic, Memory
Optek Technology[105] 1968 100, 150 GaAs, LEDs
Orbit Semiconductor[105] 100 CCD, CMOS
APT Electronics China, Guangzhou[38] 2006[38]
Aqualite China, Wuhan[38] 2008[38]
Arima Optoelectronics Taiwan, Hsinchu[38] 1999[38]
Aqualite China, Guangzhou[38] 2006[38]
AWSC Taiwan, Tainan[38] 1999[38]
BAE Systems USA, NH, Nashua[38] 1985[38] MMIC
Entrepix USA, AZ, Tempe[38] 2003[38]
CSTG UK, Glasgow[38][307] 2003[38]
Episil Semiconductor Taiwan, Hsinchu[38] 1992, 1990, 1988[38]
GCS USA, CA, Torrance[38] 1999[38]
Medtronic USA, AZ, Tempe[38] 1973[38]
MIMOS Semiconductor Malaysia, Kuala Lumpur[38] 0.006, 0.135 1997, 2002[38]
Skorpios Technologies USA, TX, Austin[38][308] 0.065 1989[38]
Episil Semiconductor Taiwan, Hsinchu[38] 1992, 1990, 1988[38]
Panjit Taiwan, Kaohsiung[38] 0.1 2003[38]
Photonix UK, Glasgow[38] 0.011 2000[38]
Plessey UK, Swindon[38]
SensFab Singapore[38] 1995[38]
Silanna Australia, Sydney Olympic Park[38] 0.030 1965,1989[38]
Silex Microsystems Sweden, Jarfalla[38] 0.009, 0.032 2003, 2009[38]
Technologies and Devices International USA, FL, Silver Springs[38] 2002[38]
Win Semiconductor Taiwan, Taoyuan[38] 0.050, 0.178 2000, 2009[38]
Xiamen Jaysun Semiconductor Manufacturing Fab 101 China, Xiamen[38] 0.035 2011[38]
Xiyue Electronics Technology Fab 1 China, Xian[38] 0.096 2007[38]
XMC Fab 1 China, Wuhan[38] 1.9 2008[38] 20,000[309]
DongbuHiTek Fab 1 South Korea, Bucheon[38] 1997[38]
DongbuHiTek Fab 2 South Korea, Eumsung-Kun[38] 2001[38]
DongbuHiTek Fab 2 Module 2 South Korea, Eumsung-Kun[38]
XMC[309] XMC Fab 2018[38] 200,000
Win Semiconductor Fab A[310] Taiwan, Taoyuan City 150[311] 2000-10
Win Semiconductor Fab B[310] Taiwan, Taoyuan City 150[311] 2000-10
Integrated Device Technology USA, OR, Hillsboro 1997 200 140-100[312]
Innovative Ion Implant UK 51-300[313]
Innovative Ion Implant France 51-300[313]
Olympus Japan MEMS[314]
Opto Diode USA[315]
Nanosystem Fabrication Facility Hong Kong[316]
Data General USA, CA, Sunnyvale[317]
HuaLei Optoelectronic China LEDs[318]
ChangXin Memory China DRAM[319]
Tsinghua Unigroup[252] China, Nanjing 30 2018 300 3D NAND Flash
Tsinghua Unigroup[252] China, Chengdu 28 Planned 300 500,000 Foundry
Sino King Technology[252] China, Hefei 2017 DRAM
Yangtze Memory Technologies Co., Ltd. (YMTC)[252] China, Wuhan 24 2019 300,000 3D NAND
Qorvo USA, Greensboro[320]
Qorvo USA, Apopka[320][321]
Qorvo USA, Richardson[320]
Qorvo USA, Hillsboro[320]
United Monolithic Semiconductors[322] Germany, Ulm Foundry
United Monolithic Semiconductors[322] France, Yvette Foundry
Peregrine Semiconductor Australia, Sydney

[323]

 CMOS
Seagate USA, MN[324]
Seagate Northern Ireland[325][326][327][328]
Infinera USA, CA[329][330]
Soraa Inc USA, CA[331][332]
Soraa Laser Diode[331]
Western Digital[333][334]
TDK Tsuruoka Higashi[335][336] 125[230]
TDK Japan, Saku[337]
Tronics USA, TX, Addison[338]
Taiyo Yuden Japan, Nagano SAW devices[230]
Taiyo Yuden Japan, Ome SAW devices[230]
Kyocera SAW devices[230]
IXYS Germany IGBT[339]
IXYS UK[339]
IXYS USA, MA[339]
IXYS USA, CA[339]
Mirrorcle Technologies USA, CA[340]
Crocus Nano Electronics CNE Russia, Moscow 2015 300 65 4000 MRAM, RRAM, MEMS, IPD, TMR, GMR Sensors
Panasonic[341] Brazil 0.9
Optotech[342] Taiwan, Hsinchu LEDs
OptoTeltronics Sp. z o.o. Poland, Gdynia 1.3[38] 1990[38] 200 65–200 45,000[38]
Sharp Corporation Fukuyama[343] Japan
Canon Inc. Oita[344] Japan
Canon Inc. Kanagawa[345] Japan
Canon Inc. Ayase[344] Japan
Japan Semiconductor

[346]

 Iwate Japan
Japan Semiconductor[346] Oita Japan
San'an[347] China, Xiamen Foundry, GaN, Power, RF
Elmos Semiconductor Germany, Dortmund[348] 1984 200 800, 350 9000 HV-CMOS

(NOTE: Some fabs located in Asia don't use the number 4, or any 2 digit number that adds up to 4, because it is considered bad luck; see tetraphobia.)

Closed

Defunct fabs include:

Company Plant Name Plant Location Plant Cost (in US$ Billions) Started Production Wafer Size (mm) Process Technology Node (nm) Production Capacity (Wafers/Month) Technology / Products Ended Production
Agere (formerly Lucent, formerly AT&T)[349] Spain, Madrid, Tres Cantos 0.67[350] 1987[351] 300, 350, 500 CMOS 2001
EI Niš Ei Poluprovodnici Serbia, Niš 1962 100 2000
Fairchild Semiconductor (formerly National Semiconductor) West Jordan USA, UT, West Jordan 1977 150 2015[352]
NEC Livingston[353] Scotland, West Lothian, Livingston April 2001
Freescale Semiconductor Toulouse Fab[354] France, Toulouse 1969 150 650 2012[355]
Freescale Semiconductor Sendai Fab[356] Japan, Sendai 1987 150 500 2009?
Hynix E-4 USA, OR, Eugene 1.3 2007 200 30,000 2008[357]
Intel Fab D2 USA, CA, Santa Clara 1989 200 130 8,000 Microprocessors, Chipsets, Flash memory 2009
Intel Fab 8[17] Israel, Jerusalem 1985 150 Microprocessors, Chipsets, Microcontrollers[18] 2007
Intel Fab 17[10][9] USA, MA, Hudson 1998 200 130 Chipsets and other[9] 2014
LFoundry (formerly Renesas Electronics)[358] Germany, Landshut 1992 200 2011
LFoundry (formerly Atmel)[359] France, Rousset ? 200 25.000[360] 2014
MOS Technology,
Commodore Semiconductor,
GMT Microelectronics		 USA, PA, Audubon 1969
1976
1995		 1000 1976
1992[361]
2001
Texas Instruments HFAB USA, TX, Houston 1967 150 2013[362]
Texas Instruments (formerly National Semiconductor) Arlington USA, TX, Arlington 1985 150 80000, 35000 2010
Texas Instruments (formerly Silicon Systems) Santa Cruz USA, CA Santa Cruz 0.250 1980 150 800 80,000 HDD 2001
TowerJazz Fab 4[184] Japan, Nishiwaki City 0.450[38] 1992[38] 60,000[38] ?
Qimonda Richmond[363] USA, VA, Richmond 300 January, 2009
Kioxia Fab 1 (at Yokkaichi Operations)[364] Japan, Yokkaichi 1992 September, 2001
TSMC Fab 1[68] Taiwan, Hsinchu 1987 20,000 March 9, 2001
Unknown (fortune 500 company) USA, East Coast[365] 150 1,600 MEMS 2016
Integrated Device Technology USA, California, Salinas 1985 150 350-800[312] 2002
NXP Semiconductors (formerly Mullard) Southampton UK, Hazel Grove, Stockport
Soviet Union Jupiter Pripiat, Kiev, Ukraine 1980 Secret government semiconductor fab closed by Chernobyl disaster 1996
Diodes Incorporated KFAB USA, MO, Lee's Summit 1994[366] 2017[367]

See also

References
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