Tantalum nitride

Tantalum nitride
Names
	Other names Tantalum mononitride
Identifiers
CAS Number	12033-62-4 ;
3D model (JSmol)	Interactive image;
ECHA InfoCard	100.031.613
EC Number	234-788-4
PubChem CID	82832;
	InChI InChI=1S/N.Ta;
	SMILES N#[Ta];
Properties
Chemical formula	TaN
Molar mass	194.955 g/mol
Appearance	black crystals
Density	14.3 g/cm3
Melting point	3,090 °C (5,590 °F; 3,360 K)
Solubility in water	insoluble
Structure
Crystal structure	Hexagonal, hP6
Space group	P-62m, No. 189
Hazards
Flash point	Non-flammable
Related compounds
Other cations	Vanadium nitride; Niobium nitride
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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	Infobox references

Tantalum nitride (Ta N) is an inorganic chemical compound. It is sometimes used to create barrier or "glue" layers between copper, or other conductive metals, and dielectric insulator films such as thermal oxides. These films are deposited on top of silicon wafers during the manufacture of integrated circuits, to create thin film surface mount resistors and has other electronic applications.^[1]

References

↑ Akashi, Teruhisa (2005). "Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance" (PDF). Retrieved 2006-09-02.

Salts and covalent derivatives of the Nitride ion
NH₃																	He(N₂)₁₁
Li₃N	Be₃N₂											BN	β-C₃N₄ g-C₃N₄	N₂	N_xO_y	NF₃	Ne
Na₃N	Mg₃N₂											AlN	SiN	PN P₃N₅	S_xN_y SN S₄N₄	NCl₃	Ar
K₃N	Ca₃N₂	ScN	TiN	VN	CrN Cr₂N	Mn_xN_y	Fe_xN_y	CoN	Ni₃N	CuN	Zn₃N₂	GaN	Ge₃N₄	As	Se	NBr₃	Kr
Rb₃N	Sr₃N₂	YN	ZrN	NbN	β-Mo₂N	Tc	Ru	Rh	PdN	Ag₃N	CdN	In	Sn	Sb	Te	I	Xe
Cs₃N	Ba₃N₂		Hf₃N₄	TaN	WN	Re	Os	Ir	Pt	Au	Hg₃N₂	TlN	Pb	BiN	Po	At	Rn
Fr	Ra		Rf	Db	Sg	Bh	Hs	Mt	Ds	Rg	Cn	Nh	Fl	Mc	Lv	Ts	Og
		↓
		La	CeN	Pr	Nd	Pm	Sm	Eu	GdN	Tb	Dy	Ho	Er	Tm	Yb	Lu
		Ac	Th	Pa	UN	Np	Pu	Am	Cm	Bk	Cf	Es	Fm	Md	No	Lr

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[1] Akashi, Teruhisa (2005). "Fabrication of a Tantalum-Nitride Thin-Film Resistor with a Low-Variability Resistance" (PDF). Retrieved 2006-09-02.