5 nanometer

In semiconductor manufacturing, the International Technology Roadmap for Semiconductors defines the 5 nanometer (5 nm) node as the technology node following the 7 nm node.

History

Background

The 5 nm node was once assumed by some experts to be the end of Moore's law.[1] Transistors smaller than 7 nm will experience quantum tunnelling through the gate oxide layer.[2] Due to the costs involved in development, 5 nm is predicted to take longer to reach market than the two years estimated by Moore's law.[1]

Beyond 7 nm, it was initially claimed that major technological advances would have to be made to produce chips at this small scale. In particular, it is believed that 5 nm may usher in the successor to the FinFET, such as a gate-all-around architecture.

Technology demos

Single transistor 7 nm scale devices were first produced by researchers in the early 2000s.

In 2002, IBM produced a 6 nm transistor.[3]

In 2003, NEC produced a 5 nm transistor.[4]

In 2015, IMEC and Cadence had fabricated 5 nm test chips. The fabricated test chips are not fully functional devices but rather are to evaluate patterning of interconnect layers.[5][6]

In 2015, Intel described a lateral nanowire (or gate-all-around) FET concept for the 5-nm node.[7]

In 2017, IBM revealed that they had created 5 nm silicon chips,[8] using silicon nanosheets in a gate-all-around configuration (GAAFET), a break from the usual FinFET design.[9]

Commercialization

Although Intel has not yet revealed any specific plans to manufacturers or retailers, their 2009 roadmap projected an end-user release by approximately 2020.[10][11]

In early 2017, Samsung announced production of a 4 nm node by 2020 as part of its revised roadmap.[12]

On January 26th 2018, TSMC announced production of a 5 nm node by 2020 on its new fab 18.[13]

In October 2018, TSMC disclosed plans to start risk production of 5 nm devices in April next year.[14]

5 nm process nodes

ITRS Logic Device

Ground Rules

TSMC

(proposed)

 ITRS Logic Device

Ground Rules

Process name 6/5nm 8/7nm 5nm 11/10nm
Transistor gate pitch (nm) 32 42 44 48
Interconnect pitch (nm) 20 24 32 36

Lower numbers are better. Transistor gate pitch is also referred to as CPP (contacted poly pitch) and interconnect pitch is also referred to as MMP (minimum metal pitch).[15][16]

Beyond 5 nm

3.5 nm is a name for the first node beyond 5 nm.[17]

In 2018, IMEC and Cadence had taped out 3 nm test chips.[18] Also, Samsung announced that they plan to use Gate-All-Around technology to produce 3nm FETs in 2021.[19]

Possible technologies that have been speculated to be useful or essential to producing chips beyond Moore's Law scaling have included: vortex laser,[20] MOSFET-BJT dual-mode transistor,[21] 3D packaging,[22] microfluidic cooling,[23] PCMOS,[24] vacuum transistors,[25] t-rays,[26] extreme ultraviolet lithography,[27] carbon nanotube transistors,[28] silicon photonics,[29] graphene,[30] phosphorene,[31] organic semiconductors,[32] gallium arsenide,[33] indium gallium arsenide,[34] nano-patterning,[35] and reconfigurable chaos-based microchips.[36]

Research and technology demos

In 2006, a team of Korean researchers from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center co-developed a 3 nm transistor, the world's smallest nanoelectronic device based on conventional finFET technology.[37][38] It was the smallest transistor ever produced at the time.

In 2008, transistors one atom thick and ten atoms wide were made by UK researchers. They were carved from graphene, a potential alternative to silicon as the basis of future computing. Graphene is a material made from flat sheets of carbon in a honeycomb arrangement, and is a leading contender. A team at the University of Manchester, UK, used it to make some of the smallest transistors at this time: devices only 1 nm across that contain just a few carbon rings.[39]

In 2010, an Australian team announced that they fabricated a single functional transistor out of 7 atoms that measured 4 nm in length.[40][41][42]

In 2012, a team of scientists at Chungbuk National University in South Korea created a 2 nm transistor.[43]

In 2012, a single-atom transistor was fabricated using a phosphorus atom bound to a silicon surface (between two significantly larger electrodes).[44] This transistor could be said to be a 360 picometer transistor, twice the van der Waals radius of a phosphorus atom; though its covalent radius bound to silicon is likely smaller.[45] Making transistors smaller than this will require either using elements with smaller atomic radii, or using subatomic particles—like electrons or protons—as functional transistors.

In 2016, researchers at Berkeley Lab created a transistor with a working 1-nanometer gate.[46][47] The field-effect transistor utilized MoS2 as the channel material, while a carbon nanotube was used to invert the channel. The effective channel length is approximately 1 nm. However, the drain to source pitch was much bigger, with micrometre size.

In 2018, researchers at Karlsruhe Institute of Technology created a transistor with a working single atom gate.[48]

References

  1. 1 2 "End of Moore's Law: It's not just about physics". CNET. August 28, 2013.
  2. ↑ "Quantum Effects At 7/5nm And Beyond". Semiconductor Engineering. Retrieved 2018-07-15.
  3. ↑ "IBM claims world's smallest silicon transistor - TheINQUIRER". Theinquirer.net. Retrieved 7 December 2017.
  4. ↑ "NEC test-produces world's smallest transistor". Thefreelibrary.com. Retrieved 7 December 2017.
  5. ↑ "IMEC and Cadence Disclose 5nm Test Chip". Semiwiki.com. Retrieved 25 Nov 2015.
  6. ↑ "The Roadmap to 5nm: Convergence of Many Solutions Needed". Semi.org. Retrieved 25 Nov 2015.
  7. ↑ Mark LaPedus (2016-01-20). "5nm Fab Challenges". Intel presented a paper that generated sparks and fueled speculation regarding the future direction of the leading-edge IC industry. The company described a next-generation transistor called the nanowire FET, which is a finFET turned on its side with a gate wrapped around it. Intel's nanowire FET, sometimes called a gate-all-around FET, is said to meet the device requirements for 5nm, as defined by the International Technology Roadmap for Semiconductors (ITRS).
  8. ↑ Sebastian, Anthony. "IBM unveils world's first 5nm chip". Ars Technica. Retrieved 2017-06-05.
  9. ↑ "IBM Figures Out How to Make 5nm Chips". Uk.pcmag.com. 5 June 2017. Retrieved 7 December 2017.
  10. ↑ "Intel Outlines Process Technology Roadmap". Xbit. 2009-08-22. Archived from the original on 2011-05-28.
  11. ↑ "インテル、32nmプロセスの順調な立ち上がりをアピール" [Intel touts steady rise of 32 nm processors] (in Japanese). PC Watch. 2009-08-21.
  12. ↑ "Samsung 4 Nanometer" [Samsung Reveals 4nm Process Generation, Full Foundry Roadmap]. Toms Hardware. 2017-05-30.
  13. ↑ http://www.tsmc.com/tsmcdotcom/PRListingNewsAction.do?action=detail&language=E&newsid=THGOHITHTH
  14. ↑ Shilov, Anton. "TSMC: First 7nm EUV Chips Taped Out, 5nm Risk Production in Q2 2019".
  15. ↑ "International Technology Roadmap for Semiconductors 2.0 2015 Edition Executive Report" (PDF). Semiconductors.org. Retrieved 7 December 2017.
  16. ↑ "5 nm lithography process". En.wikichip.org. Retrieved 7 December 2017.
  17. ↑ "15 Views from a Silicon Summit: Macro to nano perspectives of chip horizon". EETimes.com. 16 January 2017. Retrieved 4 June 2018.
  18. ↑ "Imec and Cadence Tape Out Industry's First 3nm Test Chip". Retrieved 1 March 2018.
  19. ↑ "Samsung Plans 3nm Gate-All-Around FETs in 2021". Retrieved 23 May 2018.
  20. ↑ "More life for Moore's Law? Vortex laser may enable more powerful computers". Digitaltrends.com. 1 August 2016. Retrieved 7 December 2017.
  21. ↑ R. Colin Johnson (September 14, 2016). "Transistor Trick Beats Moore: Cheaper Chip Nodes Improved".
  22. ↑ "Transistors will stop shrinking in 2021, but Moore's law will live on". Arstechnica.com. Retrieved 7 December 2017.
  23. ↑ "Microfluidic cooling may prevent the demise of Moore's Law". Techrepublic.com. Retrieved 7 December 2017.
  24. ↑ "Can probabilistic computing save Moore's law? - ExtremeTech". Extremetech.com. 21 May 2012. Retrieved 7 December 2017.
  25. ↑ Condliffe, Jamie. "How the Aged Vacuum Tube Could Save Moore's Law". Gizmodo.com. Retrieved 7 December 2017.
  26. ↑ Gorey, Colm (13 October 2016). "Advanced t-rays could push computer memory into overdrive". Siliconrepublic.com. Retrieved 7 December 2017.
  27. ↑ Woo, Stu; Tartwijk, Maarten van (3 October 2016). "Can This Little-Known Chip Company Preserve Moore's Law?". Wsj.com. Retrieved 7 December 2017 – via www.wsj.com.
  28. ↑ Estes, Adam Clark. "Carbon Nanotube Transistors That'll Save Moore's Law Are Coming in 2020". Gizmodo.com. Retrieved 7 December 2017.
  29. ↑ "Moore's law could be saved by super-fast electronics and photonic tech - ExtremeTech". Extremetech.com. 2 October 2013. Retrieved 7 December 2017.
  30. ↑ "Much more Moore's Law: Wonder-stuff graphene transistor trickery". Theregister.com. Retrieved 7 December 2017.
  31. ↑ "Archived copy". Archived from the original on 2016-10-18. Retrieved 2016-10-15.
  32. ↑ "Archived copy". Archived from the original on 2016-10-18. Retrieved 2016-10-15.
  33. ↑ "Archived copy". Archived from the original on 2016-10-18. Retrieved 2016-10-15.
  34. ↑ Shah, Agam. "Intel could prolong Moore's Law with new materials, transistors". Computerworld.com. Retrieved 7 December 2017.
  35. ↑ "Can Nano-Patterning Save Moore's Law?". Semiengineering.com. Retrieved 7 December 2017.
  36. ↑ "Researchers think chaos theory can get us past Moore's Law". Engadget.com. Retrieved 7 December 2017.
  37. ↑ "Still Room at the Bottom.(nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology )". Highbeam.com. 1 April 2006. Retrieved 7 December 2017.
  38. ↑ Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling". Symposium on VLSI Technology, 2006: 58–59. doi:10.1109/VLSIT.2006.1705215.
  39. ↑ "Archived copy". Archived from the original on 2015-05-07. Retrieved 2017-08-24.
  40. ↑ Fuechsle, Martin; et al. (2010). "Spectroscopy of few-electron single-crystal silicon quantum dots". Nature Nanotechnology. 5 (7): 502–505. doi:10.1038/nnano.2010.95.
  41. ↑ Ng, Jansen (May 24, 2010). "Researchers Create Seven Atom Transistor, Working on Quantum Computer". Daily Tech. Archived from the original on 2013-12-27. Retrieved 2011-05-25.
  42. ↑ Beale, Bob (May 24, 2010). "Quantum leap: World's smallest transistor built with just 7 atoms". Phys.org. Retrieved 7 December 2017.
  43. ↑ Covert, Adrian. "2-Nanometer Quantum Transistors Are the World's Smallest". Gizmodo.com. Retrieved 7 December 2017.
  44. ↑ Fuechsle, M.; Miwa, J. A.; Mahapatra, S.; Ryu, H.; Lee, S.; Warschkow, O.; Hollenberg, L. C. L.; Klimeck, G.; Simmons, M. Y. (2012). "A single-atom transistor". Nature Nanotechnology. 7 (4): 242. doi:10.1038/nnano.2012.21. PMID 22343383.
  45. ↑ "Team designs world's smallest transistor". Abc.net.au. Retrieved 28 May 2013.
  46. ↑ Desai, S. B.; Madhvapathy, S. R.; Sachid, A. B.; Llinas, J. P.; Wang, Q.; Ahn, G. H.; Pitner, G.; Kim, M. J.; Bokor, J.; Hu, C.; Wong, H.- S. P.; Javey, A. (2016). "MoS". Science. 354 (6308): 99–102. doi:10.1126/science.aah4698.
  47. ↑ Yang, Sarah (2016-10-06). "Smallest. Transistor. Ever. | Berkeley Lab". News Center. Retrieved 2016-10-08.
  48. ↑ https://www.kit.edu/kit/english/pi_2018_097_smallest-transistor-worldwide-switches-current-with-a-single-atom-in-solid-electrolyte.php
Preceded by
7 nm		 CMOS manufacturing processes Succeeded by
3.5 nm
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