Metal–nitride–oxide–semiconductor transistor

The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is an alternative and supplement to the existing MOS technology, wherein the insulation employed is a nitride-oxide layer.[1][2] It is used in non-volatile computer memories.[3]

See also

References

  1. ↑ Frohman-Bentchkowsky, D. (1970). "The metal-nitride-oxide-silicon (MNOS) transistor—Characteristics and applications". Proceedings of the IEEE. 58 (8): 1207–1219. doi:10.1109/PROC.1970.7897.
  2. ↑ "Metal–nitride–oxide–semiconductor (MNOS) technology". JEDEC.
  3. ↑ Ng, Kwok K. "Metal-Nitride-Oxide Semiconductor Transistor". Complete Guide to Semiconductor Devices. John Wiley & Sons, Inc. pp. 353–360. ISBN 9781118014769.


This article is issued from Wikipedia. The text is licensed under Creative Commons - Attribution - Sharealike. Additional terms may apply for the media files.