Triethylgallium

Triethylgallium
Names
	IUPAC name triethylgallane
	Systematic IUPAC name triethylgallium
Identifiers
CAS Number	1115-99-7;
3D model (JSmol)	Interactive image;
ChemSpider	59583;
ECHA InfoCard	100.012.939
PubChem CID	66198;
	SMILES CC[Ga](CC)CC;
Properties
Chemical formula	C6H15Ga
Molar mass	156.9 g/mol
Appearance	clear colourless liquid
Melting point	−82.3 °C (−116.1 °F; 190.8 K)
Boiling point	143 °C (289 °F; 416 K)
Solubility in water	Reacts[1]
Hazards
Main hazards	pyrophoric
	Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
	Infobox references

Triethylgallium, Ga(C₂H₅)₃, or TEGa, is a metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of compound semiconductors.

Properties

TEGa is a clear, colorless, pyrophoric liquid^[2] and should be handled with caution.

Applications

TEGa can be a useful alternative to trimethylgallium in the metalorganic vapour phase epitaxy of compound semiconductors because films grown using TEGa have been shown to have a lower carbon impurity concentration.^[3]

References

↑ amdg.ece.gatech.edu/msds/mo/teg_epichem.pdf
↑ Shenaikhatkhate, D; Goyette, R; Dicarlojr, R; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272: 816. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.
↑ Saxler, A; Walker, D; Kung, P; Zhang, X; Razeghi, M; Solomon, J; Mitchel, W; Vydyanath, H (1997). "Comparison of trimethylgallium and triethylgallium for the growth of GaN". Applied Physics Letters. 71: 3272. Bibcode:1997ApPhL..71.3272S. doi:10.1063/1.120310.

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[1] .ece.gatech.edu/msds/mo/teg_epichem.pdf

[2] Shenaikhatkhate, D; Goyette, R; Dicarlojr, R; Dripps, G (2004). "Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors". Journal of Crystal Growth. 272: 816. Bibcode:2004JCrGr.272..816S. doi:10.1016/j.jcrysgro.2004.09.007.

[3] Saxler, A; Walker, D; Kung, P; Zhang, X; Razeghi, M; Solomon, J; Mitchel, W; Vydyanath, H (1997). "Comparison of trimethylgallium and triethylgallium for the growth of GaN". Applied Physics Letters. 71: 3272. Bibcode:1997ApPhL..71.3272S. doi:10.1063/1.120310.