Noh Tae-won

Noh Tae-won
Born 1957 (age 60–61)
Seoul, South Korea
Residence Seoul, South Korea
Nationality South Korean
Alma mater
Known for
  1. Optical properties of solids, including composite materials, high-Tc superconductors, colossal magnetoresistance(CMR) manganites, and other transition metal oxides
  2. Metal-insulator transitions and orbital physics in transition metal oxides.
  3. Pulsed laser deposition of oxide films and artificial heterostructures
  4. Physical phenomena at oxide surfaces or interfaces
  5. Physics of oxide devices, such as FeRAM, RRAM, and spintronic devices
Awards
  • 9th Korean Science Award in physics (2004)
  • Gyeongam Award (Gyeongam Education Foundation, 2009)
  • National Honor Scientist (Ministry of Education, Science, and Technologies, South Korea, 2010)
  • Korean Best Scientist and Engineer Award (Ministry of Education, Science, and Technologies, South Korea, 2011)
Scientific career
Fields Condensed Matter Physics
Institutions Seoul National University, Institute for Basic Science
Doctoral advisor J. R. Gaines
Noh Tae-won
Hangul 노태원
Revised Romanization No Tae-won
McCune–Reischauer No T'aewŏn

Noh Tae-won is a South Korean physicist and director of the Center for Correlated Electron Systems (CCES) in the Institute for Basic Science (IBS) at Seoul National University.

Education

Noh graduated from Kyunggi High School in Seoul, South Korea, in 1976 and received his B.Sc. (1982) in Physics from Seoul National University. He obtained his Ph.D. in Physics in 1986 from Ohio State University, supervised by Dr. J. R. Gaines. He then conducted postdoctoral research in Dr. A. J. Sievers's group at Cornell University until 1989. During that period, he studied the optical properties of high-Tc superconductors, especially copper oxide. In August 1989, he joined the Faculty of Physics at Seoul National University.

Work

Noh performs research in condensed matter physics. His research has focused on transition metal oxides but has extended to other strongly correlated electron systems. His research interests include the growth of oxide thin films and artificial heterostructures, emerging phenomena in oxide surfaces and interfaces, the metal-insulator transition and orbital physics in transition metal oxides,the optical properties of numerous solids, and the physics of oxide devices such as ferroelectric random access memory (FeRAM), resistance RAM (RRAM), and spintronic devices.

He has worked on novel nanoscale physical phenomena, especially in informational devices such as FeRAMs and RRAMs. He elucidated the physical mechanism of the fatigue problem in FeRAMs. He also addressed the critical thickness of ultrathin films where they lose ferroelectricity. Additionally, he sought to explain resistance-switching phenomena, which are the basis of RRAM. Recently, he developed a new percolation model, called the "random circuit-breaker network model", which can explain reversible switching phenomena. He also discovered a novel quantum state of the correlated electron system in iridates that has attracted the interest of many researchers. He investigated the Mott physics of Sr2IrO4, which has a Mott insulator phase in the Jeff = 1/2 state.

He has contributed to the South Korean and international physics communities. In the Korean Physical Society (KPS), he has served as treasurer (FY 1999–2000), executive officer (FY 2003–04), and vice president (FY 2009–12). He has also helped to organize numerous international conferences as a member of international advisory or program committees. Currently, he is serving on the council of the Association of Asia and Pacific Physical Societies (AAPPS) and is a member of the International Union of Physics and Applied Physics (IUPAP). He has served on the editorial boards of several international journals, including Applied Physics Letter, and as Editor-in-chief of Current Applied Physics.

In 2012, he established the Center for Correlated Electron Systems in the Institute for Basic Science at Seoul National University. The research center continues to search for new emerging phenomena at the interfaces of strongly correlated electron systems such as oxides.[1][2][3][4][5][6]

Awards

  • 2000. 5 Scientist of the Month Award (Korea Science and Engineering Foundation)
  • 2000. 5 Award for Outstanding Paper (Korean Federation of Science and Technology Societies)
  • 2000. 6 Research Award (College of Natural Science, Seoul National University)
  • 2003. 5 Ikeda Award (Ikeda Memorial Foundation, Japan)
  • 2004. 2 Korea Science Award (Korea Science and Engineering Foundation)
  • 2006. 4 Scopus Citation Award (Elsevier)
  • 2009. 11 Kyung-Ahm Prize (Kyung-Ahm Education & Culture Foundation)
  • 2010. 5 National Honor Scientist (Ministry of Education, Science, and Technologies, Korea)
  • 2011. 4 Korean Best Scientist and Engineer Award (Ministry of Education, Science, and Technologies, Korea)

Technical reports and conference/event proceedings

Noh was Chair of the 5th Korea–Japan Conference on Ferroelectricity (KJC-FE5, 2004), the International Workshop on Oxide Electronics (WOE-2007), and the Joint Conference of the Asian Meeting on Ferroelectricity and the Asian Meeting on Electroceramics (AMF-AMEC-2010). He has also severed on the International Advisory or Program Committees of over 40 other international conferences. He has given over 100 invited talks at international conferences. He has also delivered plenary talks at international conferences, including IMF-11 (2005, Brazil), JKC-FE6 (2006, Japan), AAPC-11 (2010, China), KPS (2011, Busan), and AMEC (2012, Malaysia).

See also

References

  1. ↑ "Lanthanum-substituted bismuth titanate for use in non-volatile memories", Nature 1999, 401, 6754.
  2. ↑ "Formation of Co nanoclusters in epitaxial Ti0.96Co0.04O2 thin films and their ferromagnetism", Applied Physics Letters 2002, 81, 13.
  3. ↑ "Polarization relaxation induced by a depolarization field in ultrathin ferroelectric BaTiO3 capacitors”, Physical Review Letters 2005, 95, 23.
  4. ↑ "Random circuit breaker network model for unipolar resistance switching", Advanced Materials 2008, 20, 6.
  5. ↑ "Novel Jeff=1/2 Mott state induced by relativistic spin-orbit coupling in Sr2IrO4", Physical Review Letters 2008, 101, 7.
  6. ↑ "Giant flexoelectric effect in ferroelectric epitaxial thin films", Physical Review Letters 2011, 107, 5.
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