Gallium phosphide
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| Names | |
|---|---|
| IUPAC name
gallanylidynephosphane | |
| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.031.858 |
PubChem CID |
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| RTECS number | LW9675000 |
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| Properties | |
| GaP | |
| Molar mass | 100.697 g/mol |
| Appearance | pale orange solid |
| Odor | odorless |
| Density | 4.138 g/cm3 |
| Melting point | 1,477 °C (2,691 °F; 1,750 K) |
| insoluble | |
| Band gap | 2.26 eV (300 K) |
| Electron mobility | 250 cm2/(V*s) (300 K) |
| Thermal conductivity | 1.1 W/(cm*K) (300 K) |
Refractive index (nD) |
3.02 (2.48 µm), 3.19 (840 nm), 3.45 (550 nm), 4.30 (262 nm) |
| Structure | |
| Zinc Blende | |
| T2d-F-43m | |
a = 545.05 pm | |
| Tetrahedral | |
| Hazards | |
| NFPA 704 | |
| Flash point | 110 °C (230 °F; 383 K) |
| Related compounds | |
Other anions |
Gallium nitride Gallium arsenide Gallium antimonide |
Other cations |
Aluminium phosphide Indium phosphide |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
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| Infobox references | |
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.26 eV(300K). The polycrystalline material has the appearance of pale orange pieces. Undoped single crystal wafers appear clear orange, but strongly doped wafers appear darker due to free-carrier absorption. It is odorless and insoluble in water.
Sulfur or tellurium are used as dopants to produce n-type semiconductors. Zinc is used as a dopant for the p-type semiconductor.
Gallium phosphide has applications in optical systems. Its refractive index is between 4.30 at 262 nm (UV), 3.45 at 550 nm (green) and 3.19 at 840 nm (IR)[1], which is higher than in most known materials, including diamond (2.4).
Light-emitting diodes
Gallium phosphide has been used in the manufacture of low-cost red, orange, and green light-emitting diodes (LEDs) with low to medium brightness since the 1960s. It has a relatively short life at higher current and its lifetime is sensitive to temperature. It is used standalone or together with gallium arsenide phosphide.
Pure GaP LEDs emit green light at a wavelength of 555 nm. Nitrogen-doped GaP emits yellow-green (565 nm) light, zinc oxide doped GaP emits red (700 nm).
Gallium phosphide is transparent for yellow and red light, therefore GaAsP-on-GaP LEDs are more efficient than GaAsP-on-GaAs.
At temperatures above ~900 °C, gallium phosphide dissociates and the phosphorus escapes as a gas. In crystal growth from a 1500 °C melt (for LED wafers), this must be prevented by holding the phosphorus in with a blanket of molten boric oxide in inert gas pressure of 10-100 atmospheres. The process is called Liquid Encapsulated Czochralski (LEC) growth, an elaboration of the Czochralski process used for silicon wafers.