Gallium antimonide

Gallium antimonide
Names
IUPAC name
Gallium(III) antimonide
Other names
Gallium antimonide
Identifiers
3D model (JSmol)
ChemSpider
ECHA InfoCard 100.031.859
Properties
GaSb
Molar mass 191.483 g/mol
Density 5.614 g/cm3
Melting point 712 °C (1,314 °F; 985 K)
insoluble
Band gap 0.726 eV (300 K)
Electron mobility 3000 cm2/(V*s) (300 K)
Thermal conductivity 0.32 W/(cm*K) (300 K)
3.8
Structure
Sphalerite, cF8
F-43m, No. 216
Hazards
NFPA 704
Flammability code 0: Will not burn. E.g., waterHealth code 1: Exposure would cause irritation but only minor residual injury. E.g., turpentineReactivity code 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g., liquid nitrogenSpecial hazards (white): no codeNFPA 704 four-colored diamond
0
1
0
Flash point Non-flammable
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Infobox references

Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm.

History

The intermetallic compound GaSb was first prepared in 1926 by Victor Goldschmidt, who directly combined the elements under an inert gas atmosphere and reported on GaSb's lattice constant, which has since been revised. Goldschmidt also synthesized gallium phosphide and gallium arsenide.[1] The Ga-Sb phase equilibria was investigated in 1955 by Koster[2] and by Greenfield.[3]

Applications

GaSb can be used for Infrared detectors, infrared LEDs and lasers and transistors, and thermophotovoltaic systems.

See also

References

  1. ↑ Goldschmidt, V. M., Skr. Akad. Oslo, 8 (1926).
  2. ↑ Koster, W.; Thoma, B., Z. Metallkd. 46, 291 (1955).
  3. ↑ Greenfield, I. G.; Smith, R. L., Trans. AIME 203, 351 (1955).


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