Daniel M. Fleetwood

Fleetwood joined Sandia National Laboratories, Albuquerque, New Mexico in 1984. He was named a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department in 1990. In 1997 he received R&D 100 and IndustryWeek magazine awards for co-invention of a new type of computer memory chip based on mobile protons in Silicon dioxide (protonic nonvolatile field effect transistor memory)[8]. This chip was also recognized as Discover magazine's 1998 Invention of the Year in computer hardware and electronics. In 2000 he was named one of the top 250 most highly cited researchers in Engineering by the Institute for Scientific Information.[9]

In 1999 Fleetwood left Sandia to accept the position of Professor of Electrical Engineering at Vanderbilt University in Nashville, Tennessee. In 2000, he was also named a Professor of Physics, in 2001 he was appointed Associate Dean for Research of the Vanderbilt School of Engineering, and in 2003 he was named Chair of the Electrical Engineering and Computer Science Department.[10] He is associated with The Radiation Effects and Reliability Group at Vanderbilt which is the largest of its type at any US university.[11] and Institute for Space and Defense Electronics. His research interests are Effects of ionizing radiation on microelectronic devices and materials, Flicker noise in semiconductors, radiation hardness assurance test methods for mission-critical equipments, radiation effects modeling and simulation and novel microelectronic materials. Fleetwood is the author of more than 500 publications on radiation effects in microelectronics, defects in semiconductor devices, and low-frequency noise. These papers have been cited more than 21000 times (citation h factor = 80, per Google Scholar[12]). He was named an Honorary Professor of the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences in 2011.[13]