Lester Fuess Eastman

Lester Fuess Eastman (May 21, 1928 – August 9, 2013) was a physicist, engineer and educator

Eastman worked primarily with the development of high frequency semiconductor device engineering and science technologies from the early 1960s through to his retirement.[1] While at Cornell University, he was awarded the status of Fellow[2] in the American Physical Society,[3] after he was nominated by their Forum on Industrial and Applied Physics in 2001,[4] for pioneering contributions to the concepts of ballistic transport and piezoelectric doping in ultra-small III-V heterojunction transistors for applications in high-speed and microwave power devices and circuits and for leadership in transitioning electric.

References

  1. ↑ "Lester Fuess Eastman Brief Biography" (PDF). blogs.cornell.edu. Retrieved 2017-04-21.
  2. ↑ "APS Fellowship". www.aps.org. Retrieved 2017-04-20.
  3. ↑ "APS Fellow Archive". www.aps.org. Retrieved 2017-04-20.
  4. ↑ "APS Fellows 2001". www.aps.org. Retrieved 2017-04-20.


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